Ni, Cu and Au ions were implanted into silicon (111) wafers at irradiation energies of 80–230 MeV with doses of 0.1–5.0×1014 atoms/cm2. X-ray rocking curves from the wafers were investigated using the dynamical diffraction theory. Strain profiles obtained by curve fitting revealed that the energy loss per unit length (energy deposition) due to a nuclear collision played an important role in the expansion of the lattice spacing. The height of the main peak of the strain profile was proportional to the dose of ion implantation. In the case of Au implantation, an additional distortion near the crystal surface and a uniform expansion of the lattice spacing in the distorted layer were observed.

Effect of stacking layers on the microwave dielectric properties of the (Li 0:5 Sm 0:5 )TiO 3 /CaTiO 3 (LSTO/CTO) thin films prepared by the metalorganic solution deposition technique (MOSD) was investigated. The dielectric constant (K), dielectric loss (tan ) and temperature coefficient of dielectric constant (TCK) of CaTiO 3 films measured at 6 GHz were 160, 0.003 and À1340 ppm/ C, respectively. In contrast, the (Li 0:5 Sm 0:5 )TiO 3 films showed K of 35, tan of 0.001 and TCK of þ320 ppm/ C. As the thickness of CTO layer in the LSTO/CTO films increased, K increased and TCK changed from positive values to negative values by dielectric mixing rule. Especially, LSTO(200 nm)/CTO(200 nm) films exhibited TCK of þ10 ppm/ C, indicating temperature stability. The tan of LSTO/CTO films increased with increasing the thickness of CTO layer. This result was attributed to the fact that the stresses were induced by the higher thermal-expansion coefficient of CTO than that of LSTO. Also, as compared with LSTO(200 nm)/CTO(200 nm) film, the K and TCK of LSTO(100 nm)/CTO(200 nm)/ LSTO(100 nm) film were not changed, but the dielectric loss increased. This result indicated that the dielectric loss was affected by the number of interfaces between CTO and LSTO layers.