In this paper we fabricated and tested the 0 . 2 6 P NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id-Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime (nitride oxide .gate device satisfied 30years, but the lifetime of wet gate oxide was only O.lyear), variation of Vg, charge to breakdown and charge trapping etc.

In this paper we fabricated and measured the 0.26㎛ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.

A bstructIn this puper, w e propose n novel method of optintizing t he intpurig, concentration in N-junction region to redrrce t he local ,field-enhanced therniionic field emission ciii.:-e/rt, resulting in an excellent tail distri6ution of retention time without trade-offs of cell transistor threshold voltage and o peration current. The fabricated device has W/L= 1Y0.26 NMOSFET, shallow trench isolation. 7.Onm wet and/or ni rride gute oxide.