Ridge National Laboratory, Oak Ridge, Tennessee 37831 § These authors contribute equally. AbstractSemiconductor heterostructures provide a powerful platform to engineer the dynamics of excitons for fundamental and applied interests. However, the functionality of conventional semiconductor heterostructures is often limited by inefficient charge transfer across interfaces due to the interfacial imperfection caused by lattice mismatch. Here we demonstrate that MoS 2 /WS 2 heterostructures consisting of monolayer MoS 2 and WS 2 stacked in the vertical direction can enable equally efficient interlayer exciton relaxation regardless the epitaxy and orientation of the stacking. This is manifested by a similar two orders of magnitude decrease of

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