A theoretical model is constructed to simulate the pressure distribution arising from wafer curvature (film stress) during chemical mechanical polishing (CMP), based on theories of elastic contact stress. Results from oxide CMP experiments suggest that the wafer curvature results in a nonuniform polish rate distribution across the wafer, in agreement with the simulation based on the model. This stress-dependent polish nonuniformity is attributed to the nonuniform pressure distribution across the wafer, induced by the wafer radius of curvature (film stress). Also, it was found that the magnitude of oxide film stress itself has little effect on removal rate. Oxides with tensile stress tend to have a weakened bond structure and enhanced chemical reactivity, both of which result in slightly higher removal rates. The reverse is true for oxides with compressive stress. Deviations from the model prediction may result from the stress induced by slurry flow, local variations in wafer shape and form, and pad surface properties.