Intrinsically two-dimensional (2D) ferromagnetic materials normally exhibit a low transition temperature, above which they would lose their magnetic properties. This makes it difficult to develop them for practical applications. Substituting transition metal atoms into 2D systems provides a straightforward way for achieving room-temperature ferromagnetism. Here, we propose a one-step chemical vapor deposition method to prepare Mn-substituted MoS 2 monolayers, which exhibit robust magnetism, as confirmed by a combined study of physical property measurement systems and magneto-optical measurements. Highresolution transmission electron microscopy, Raman signals, and Xray photoelectron spectroscopy analysis have all shown that the manganese atoms in MoS 2 act as a substitute for the molybdenum sites. The microscopic origin of magnetism in Mn-MoS 2 is further revealed on the basis of first-principles calculations, which corroborate the experimental results obtained. Our study demonstrates a simple route to creating 2D ferroelectric materials with broad prospects in spintronic devices and next-generation memory components.

Strain engineering has been extensively applied in the regulation of physical and chemical properties of two-dimensional (2D) materials as a promising strategy, which remarkably broadens their application prospects in flexible...

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2D materials are regarded as ideal candidates for fabricating flexible devices in electronics, due to their intrinsic clean surface and malleability. However, due to the weak interaction between 2D materials and the substrates underneath, bending or stretching will inevitably cause severe slippage, which degrades the device's performance or even leads to failure. The realization of no slippage between 2D materials and substrates under ultrahigh strain has become a key topic in the field of flexible electronics. Here, a strategy to overcome this limitation, by which strain can be effectively transferred to 2D materials is demonstrated. By applying this improved method to few‐layer β‐InSe, it is found that the loaded strain reaches as high as 7.2% without any slippage, along with an apparent redshift of ≈4.18 cm−1 in Raman scattering signals. The evolution trend of bandgap observed in the luminous properties of β‐InSe is consistent with the author's density functional theory (DFT) calculations. This convenient method can be intensively expanded to other van der Waals (vdW) layered materials and sheds light on flexible electronic applications.

Layered transition metal dichalcogenides (TMDs) provide a favorable research platform for the advancement of spintronics and valleytronics because of their unique spin-valley coupling effect, which is attributed to the absence of inversion symmetry coupled with the presence of time-reversal symmetry. To maneuver the valley pseudospin efficiently is of great importance for the fabrication of conceptual devices in microelectronics. Here, we propose a straightforward way to modulate valley pseudospin with interface engineering. An underlying negative correlation between the quantum yield of photoluminescence and the degree of valley polarization was discovered. Enhanced luminous intensities were observed in the MoS2/hBN heterostructure but with a low value of valley polarization, which was in stark contrast to those observed in the MoS2/SiO2 heterostructure. Based on the steady-state and time-resolved optical measurements, we reveal the correlation between exciton lifetime, luminous efficiency, and valley polarization. Our results emphasize the significance of interface engineering for tailoring valley pseudospin in two-dimensional systems and probably advance the progression of the conceptual devices based on TMDs in spintronics and valleytronics.