The Goos-Hänchen shift is vital in the fields of optics and nanophotonics. In this paper, positive and negative Goos-Hänchen shifts are observed in the linearly or circularly polarized laser beams reflected from single crystal silicon, with tunable strains induced by electricity. The Goos-Hänchen shifts are analyzed by the electro-optic effect theory. The results show that the Goos-Hänchen shifts are related to the relative positions of the incident laser beams and the direction of silicon crystallization. The maximum pressure found for an external direct current voltage acting on the single crystal silicon was 9.2 Â 10 9 Pa.

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