Tind iselenide (SnSe 2 ), as an anodem aterial,h as outstandingp otential for use in advanced lithium-ion batteries. However,l ike other tin-based anodes, SnSe 2 suffers from poor cycle life and low rate capabilityd ue to large volume expansion during the repeated Li + insertion/de-insertion process. This work reports an effectivea nd easy strategy to combine SnSe 2 and carbon nanotubes (CNTs) to form a SnSe 2 /CNTsh ybrid nanostructure. The synthesized SnSe 2 has ar egularh exagonal shape with at ypical 2D nanostructure and the carbon nanotubes combine well with the SnSe 2 nanosheets. The hybrid nanostructure can significantly reduce the serious damage to electrodes that occurs during electrochemical cycling processes. Remarkably,t he SnSe 2 / CNTse lectrodee xhibits ah igh reversible specific capacity of 457.6 mA hg À1 at 0.1 Ca nd 210.3 mA hg À1 after 100 cycles. At ac ycling rate of 0.5 C, the SnSe 2 /CNTse lectrode can still achieve ah igh value of 176.5 mA hg À1 ,w hereas av alue of 45.8 mA hg À1 is achieved for the pure SnSe 2 electrode. The enhanced electrochemical performance of the SnSe 2 /CNTs electrode demonstrates its great potential for use in lithiumion batteries.T hus, this work reports af acile approacht o the synthesis of SnSe 2 /CNTsa sap romising anode material for lithium-ionb atteries.Supporting information and the ORCID identification number(s) for the author(s) of this article can be found under: https://doi.

The capability to directly build atomically thin transition metal dichalcogenide (TMD) devices by chemical synthesis offers important opportunities to achieve large-scale electronics and optoelectronics with seamless interfaces. Here, a general approach for the chemical synthesis of a variety of TMD (e.g., MoS , WS , and MoSe ) device arrays over large areas is reported. During chemical vapor deposition, semiconducting TMD channels and metallic TMD/carbon nanotube (CNT) hybrid electrodes are simultaneously formed on CNT-patterned substrate, and then coalesce into seamless devices. Chemically synthesized TMD devices exhibit attractive electrical and mechanical properties. It is demonstrated that chemically synthesized MoS -MoS /CNT devices have Ohmic contacts between MoS /CNT hybrid electrodes and MoS channels. In addition, MoS -MoS /CNT devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold-contacted devices, which makes them suitable for flexible optoelectronics. Accordingly, a highly flexible pixel array based on chemically synthesized MoS -MoS /CNT photodetectors is applied for image sensing.

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