This paper presents a systematic investigation on the incorporation of chemical exfoliation graphene sheets (GS) in TiO(2) nanoparticle films via a molecular grafting method for dye-sensitized solar cells (DSSCs). By controlling the oxidation time in the chemical exfoliation process, both high conductivity of reduced GS and good attachment of TiO(2) nanoparticles on the GS were achieved. Uniform GS/TiO(2) composite films with large areas on conductive glass were prepared by electrophoretic deposition, and the incorporation of GS significantly improved the conductivity of the TiO(2) nanoparticle film by more than 2 orders of magnitude. Moreover, the power conversion efficiency for DSSC based on GS/TiO(2) composite films is more than 5 times higher than that based on TiO(2) alone, indicating that the incorporation of GS is an efficient means for enhancing the photovoltaic (PV) performance. The better PV performance of GS/TiO(2) DSSC is also attributed to the better dye loading of GS/TiO(2) film than that of TiO(2) film. The effect of GS content on the PV performances was also investigated. It was found that the power conversion efficiency increased first and then decreased with the increasing of GS concentration due to the decrease in the transmittance at high GS content. Further improvements can be expected by fully optimizing fabrication conditions and device configuration, such as increasing dye loading via thicker films. The present synthetic strategy is expected to lead to a family of composites with designed properties.
We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the graphene reacted with ion atmosphere showed that B atoms are substitutionally incorporated into graphenes without segregation of B domains. The B content was adjusted over a range of 0-13.85 atom % by controlling the ion reaction time, from which the doping effects on transport properties were quantitatively evaluated. Electrical measurements from graphene field-effect transistors show that the B-doped graphenes have a distinct p-type conductivity with a current on/off ratio higher than 10(2). Especially, the band gap of graphenes is tuned from 0 to ~0.54 eV with increasing B content, leading to a series of modulated transport properties. We believe the controllable doping for graphenes with predictable transport properties may pave a way for the development of graphene-based devices.
Plate-like copper-substituted P2-type Na0.67CuxMn1−xO2 is able to rapidly charge and discharge within 5 minutes while still giving a capacity of about 90 mA h g−1 at a current of 1000 mA g−1.
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