Via incorporation of Sr2+ into (Pb,La)(Zr,Sn,Ti)O3, high recoverable energy density (Ure) is achieved in (Pb,Sr,La)(Zr,Sn,Ti)O3 (PSLZST) ceramics. All Sr2+ modified ceramics exhibit orthorhombic antiferroelectric (AFE) characteristics, and have higher ferroelectric-AFE phase switching electric field (EA, proportional to Ure) than the base composition with a tetragonal AFE phase. By properly adjusting the Sr2+ content, the Ure of PSLZST ceramics is greatly improved. This is attributed to the substitution of Pb2+ by Sr2+ with a smaller ion radius, which decreases the tolerance factor leading to enhanced AFE phase stability and thus increased EA. The best energy storage properties are achieved in the PSLZST ceramic with a Sr2+ content of 0.015. It exhibits a maximum room-temperature Ure of 5.56 J/cm3, the highest value achieved so far for dielectric ceramics prepared by a conventional sintering technique, and very small energy density variation (<12%) in the range of 30–90 °C. The high Ure (>4.9 J/cm3) over a wide temperature range implies attractive prospects of this material for developing high power capacitors usable under various conditions.

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Ferroelectric (FE) materials are thought to be promising materials for self-powered ultraviolet (UV) photodetector applications because of their photovoltaic effects. However, FE-based photodetectors exhibited poor performance because of the weak photovoltaic effect of FE depolarization field (E dp) on the separation of photo-generated carriers. In this work, self-powered photodetectors based on both E dp and built-in electric field at the p-n junction (E p‑n) were designed to obtain enhanced device performance. A NiO/Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) heterojunction-based device is constructed to take advantage of energy level alignments that favor electron extraction. The device exhibits a tunable performance upon varying the polarization direction of PLZT. The NiO/PLZT heterojunction-based device with the PLZT layer in the poling down state shows a higher responsivity [R = (1.8 ± 0.12) × 10–4 A/W] and detectivity [D* = (3.69 ± 0.2) × 109 Jones], a faster response speed (τr = 0.34 ± 0.03 s, τd = 0.36 ± 0.02 s), and a lower dark current [I dark = (1.3 ± 0.19) × 10–12 A] under zero bias than the PLZT-based device because of the synergistic effects of E dp and E p‑n. Moreover, under weak-light illumination (0.1 mW/cm2), it exhibits even higher R [(6.3 ± 1.2) × 10–4 A/W] and D* [(1.29 ± 0.26) × 1010 Jones] values, which surpass those of most previously reported FE-based self-powered photodetectors. Our work emphasizes the role of the coupling effect between E p‑n and E dp in the photovoltaic process of NiO/PLZT heterojunction-based devices and provides an effective way to promote the self-powered UV photodetector applications.