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Relaxor‐based ferroelectric single crystals, such as (1 − x)Pb(Mg1/3Nb2/3)O3xPbTiO3 (PMNxPT, or PMNT) single crystals, exhibit large pyroelectric response, low thermal diffusivity, and high temperature stability. To fabricate high performance infrared detectors with relaxor‐based single crystals, the related readout circuit was investigated to increase signal‐to‐noise ratio, and 8 × 1 CMOS readout circuit is fabricated to gain very weak current, which provides a solution for uncooled large focal plane arrays devices based on relaxor‐based single crystals.

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This paper presents a wideband RF front-end with novel current-reuse wide band low noise amplifier (LNA), current-reuse V -I converter, active double balanced mixer and transimpedance amplifier for short range device (SRD) applications. With the proposed current-reuse LNA, the DC consumption of the front-end reduces considerably while maintaining sufficient performance needed by SRD devices. The RF front-end was fabricated in 0.18 m RFCMOS process and occupies a silicon area of just 0.11 mm 2 . Operating in 433 MHz band, the measurement results show the RF front-end achieves a conversion gain of 29.7 dB, a double side band noise figure of 9.7 dB, an input referenced third intercept point of -24.9 dBm with only 1.44 mA power consumption from 1.8 V supply. Compared to other reported front-ends, it has an advantage in power consumption.