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A novel NiPt-silicide formation using microwave annealing (MWA) is proposed, and superior properties of NiPt silicide in ultra-shallow junction (USJ) are demonstrated for the first time. MWA is suitable for the thin NiPtSi formation with its stable and ultra-low temperature (less than 250 °C) heating. The anomalous Ni diffusion during the NiPtSi formation is considered to be suppressed because MW system heats Si substrates selectively. As a result, low-resistive and homogeneous NiPtSi can be formed, and the increase of the junction leakage current due to the abnormal NiPt-silicide growth is successfully suppressed in USJ. This superior technique is quite promising for achieving 22nm-node CMOS and beyond.

Antenna A b s t r a c t Triangular coupler We have developed a 60-GHz FM-CW radar module that generates sidebands by switching a HEMT front-end. Our module also uses FM-AM conversion j heterodyne detection for FM-AM conversion noise noise reduction. The module's signal to noise Antenna ratio was 20 dB better than a previously Beat signal Mixer designed homodyne FM-CW radar module.

Enhancement of n-channel metal–oxide–semiconductor field-effect transistor (nMOSFET) performance with a carbon-doped source/drain (Si:C-S/D) was approached analytically for the first time. Si:C-S/D was formed by molecular carbon (C7H x ) ion implantation and laser annealing. C7H x implantation forms a smooth interface between Si:C layers and Si substrates, and laser annealing also achieves a high carbon concentration of substitution. The channel strain with Si:C-S/D was successfully measured by UV Raman spectroscopy using a particular test pattern. The thick Si:C-S/D layer and the high carbon concentration of substitution produce a large strain at the channel region. It was confirmed that the performance of nMOSFETs is effectively improved by strained Si:C-S/D. These analytical approaches are quite valuable for promoting the development of strained nMOSFETs with Si:C-S/D.