Electrical properties of metal-oxide-semiconductor (MOS) devices fabricated on 3C-SiC single crystalline films on (100)Si substrates have been examined by capacitance-voltage method and deep level transient spectroscopy. The electrical properties such as carrier concentration, interface states, fixed oxide charge and deep traps are strongly related to the oxidation ambient and temperature. It has been found that the interface state density of the order of 1010 cm−2 eV−1 can be achieved by wet oxidation at 1000 °C. The influence of preferential oxidation of antiphase grain boundaries is considerable on the carrier concentration and the interface state density in the case of wet oxidation. From a practical point of view, the wet oxidation is concluded to be superior to the dry oxidation because of the lower densities of fixed oxide charge, interface states, and deep traps.
A tactile sensation device using micro-electromechanical system (MEMS) has been developed. This device is integrated with a haptic sensation robot for use as fingers. The tactile device must be miniaturized to enable attachment of the actuator mechanism to the fingers. Therefore, we used MEMS technology for this device. The device is composed of an interface part fabricated by 3D printing, pins, and MEMS cantilever-type actuators. It has the ability to stimulate the mechanoreceptors of the fingertips. The device and robot can display not only high-resolution images of the fingertips but also the repulsion force during finger operations such as tool holding and rotation. We have not yet achieved the final device because of fabrication problems. In this paper, we explain the details, progress of development, and results of trials on the prototype device.
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