As device dimensions decrease without a proportional reduction in the supply voltage, short-channel MOSFETs may be operated at voltages close to drain-to-source breakdown. The single-pulse transmission line technique has been used previously to study devices under electrostatic discharge (ESD) as it allows the suppression of unwanted reflections. In this paper, a modified continuous-pulsing transmission line technique is combined with a spectroscopic photon emission microscope set-up to investigate photon emissions from short-channel MOSFETs biased into snapback and second breakdown. This new technique enables the photon emission spectra from a grounded-gate nMOSFET biased into snapback to be studied, with only minimal degradation to the device under test. Photon emission spectra of the grounded-gate nMOSFET biased into the snapback region showed that the spectra are a combination of the spectra for a forward-biased and reverse-biased p-n junction. A very weak emission at a wavelength of 375 nm (3.3 eV) was also detected, and this was suspected to be due to the injection of hot electrons into the gate oxide. By fitting the photon emission spectra obtained to the electron temperature model, the carrier temperature of an nMOSFET biased into snapback was also obtained.

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Porurrietcrs c![fictirig (lie p " t i c eleriieiits of ci Lead-orz-Chip (LOC) Tliirz-Sriinll-OirtliriePackage (TSOP) 'were sttitlieti hy riiotleliiip uith a TI iriterricrl RLC crtrnctor arid riieasitrwiierit technique rtsirig a Vector Network Analyzer (\"A). \70rYtrtiori irz the Resistnrice ( R ) , lriditctpricr ( L ) coid Capacitarice ( C ) of a TSOP with respect to charzges iri the lead rliriierisioris I t w e clssessed Oy riiodelirrg with a lirze-&-space pattern hnsecl on the TSOP georiietry. The effect on KLC d i r e to chc~ripes iii the lecid-to-pimind separation, electrictrl properties 01 the ritaterials arid freqirericy it:ere czssessetl by riiocfehg btrsrd or1 a 54Pirz TSOP applied to 64MOX16 SDRAM. Measiil-eFnerzt was n7ade to corlfirrn the ,fiqiirricy tfepcrrderzcv of RLC ,for Alloy42 (A42), Copper (Cic) arid Pallczdirtrii plated Copper (Pd/Cu) CIS leadfraiize iimtri~icil. Sori~e,friridnriierrtnls.for packagirig desigri 0i.e srriiiiiiarized. For instarice, L caii be reditced bji increasing lead u.it/th tilit/ t/ecwctsirig /ead-io-gi~oitricf separation sirnrt/tcrrieous!\.. hi frequency stdies, it is ,foltnd that A42 ieadfiariie Iicis (I l i i ,~l t r r~r~(~~~~t f~i i c y dr/el'rritlerzc.y of R arid L. Tlziis. electriccllly inferior to those of Cu arid Pd/Cir .