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Carrier transport in Al+ implanted 4H-SiC for Al concentrations in the 5 × 1019 5 × 1020 cm-3 range and after 2000°C/30s microwave annealing are characterized. Each sample resistivity decreases with increasing temperature and attains values of about 102 Ωcm for temperatures > 600 K. At room temperature, resistivity decreases from 4 × 10-1 Ωcm to 3 × 102 Ωcm with the increase of implanted Al concentration. The onset of an impurity band conduction around room temperature takes place for implanted Al concentrations > 3 × 1020 cm-3. Al+ implanted and microwave annealed 4HSiC vertical p+-i-n diodes have shown promising forward characteristics.

The fabrication of a fully ion-implanted and microwave annealed vertical p-i-n diode using high purity semi-insulating 4H-SiC substrate has been demonstrated for the first time. The thickness of the intrinsic region is the wafer thickness 350 µm. The anode and cathode of the diode have been doped with Al and P, respectively, to concentrations of few times 1020 cm-3 by ion implantation. The post implantation annealing has been performed by microwave heating the samples up to 2100°C. The device rectifying behavior indicates that a carrier modulation takes place in the bulk intrinsic region.

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