Black phosphorene has attracted much attention as a semiconducting two‐dimensional material. Violet phosphorus is another layered semiconducting phosphorus allotrope with unique electronic and optoelectronic properties. However, no confirmed violet crystals or reliable lattice structure of violet phosphorus had been obtained. Now, violet phosphorus single crystals were produced and the lattice structure has been obtained by single‐crystal x‐ray diffraction to be monoclinic with space group of P2/n (13) (a=9.210, b=9.128, c=21.893 Å, β=97.776°). The lattice structure obtained was confirmed to be reliable and stable. The optical band gap of violet phosphorus is around 1.7 eV, which is slightly larger than the calculated value. The thermal decomposition temperature was 52 °C higher than its black phosphorus counterpart, which was assumed to be the most stable form. Violet phosphorene was easily obtained by both mechanical and solution exfoliation under ambient conditions.

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Dielectric materials with good thermal transport performance and desirable dielectric properties have significant potential to address the critical challenges of heat dissipation for microelectronic devices and power equipment under high electric field. This work reported the role of synergistic effect and interface on through-plane thermal conductivity and dielectric properties by intercalating the hybrid fillers of the alumina and boron nitride nanosheets (BNNs) into epoxy resin. For instance, epoxy composite with hybrid fillers at a relatively low loading shows an increase of around 3 times in through-plane thermal conductivity and maintains a close dielectric breakdown strength compared to pure epoxy. Meanwhile, the epoxy composite shows extremely low dielectric loss of 0.0024 at room temperature and 0.022 at 100 ℃ and 10−1 Hz. And covalent bonding and hydrogen-bond interaction models were presented for analyzing the thermal conductivity and dielectric properties.

The drastic need for development of power and electronic equipment has long been calling for energy storage materials that possess favorable energy and power densities simultaneously, yet neither capacitive nor battery-type materials can meet the aforementioned demand. By contrast, pseudocapacitive materials store ions through redox reactions with charge/discharge rates comparable to those of capacitors, holding the promise of serving as electrode materials in advanced electrochemical energy storage (EES) devices. Therefore, it is of vital importance to enhance pseudocapacitive responses of energy storage materials to obtain excellent energy and power densities at the same time. In this Review, we first present basic concepts and characteristics about pseudocapacitive behaviors for better guidance on material design researches. Second, we discuss several important and effective material design measures for boosting pseudocapacitive responses of materials to improve rate capabilities, which mainly include downsizing, heterostructure engineering, adding atom and vacancy dopants, expanding interlayer distance, exposing active facets, and designing nanosheets. Finally, we outline possible developing trends in the rational design of pseudocapacitive materials and EES devices toward high-performance energy storage.