We investigate the excitonic dynamics in MoSe 2 monolayer and bulk samples by femtosecond transient absorption. Excitons are resonantly injected by a 750-nm and 100-fs laser pulse, and are detected by measuring a differential reflection of a probe pulse tuned in the range 790-820 nm. We observe a strong density-dependent initial decay of the exciton population in monolayers, which can be well described by the exciton-exciton annihilation. Such a feature is not observed in a bulk sample under comparable conditions. We also observe the saturated absorption induced by excitons in both monolayers and the bulk in the differential reflection measurements, which indicates their potential applications as saturable absorbers.

One key challenge in developing postsilicon electronic technology is to find ultrathin channel materials with high charge mobilities and sizable energy band gaps. Graphene can offer extremely high charge mobilities; however, the lack of a band gap presents a significant barrier. Transition metal dichalcogenides possess sizable and thickness-tunable band gaps; however, their charge mobilities are relatively low. Here we show that black phosphorus has room-temperature charge mobilities on the order of 10(4) cm(2) V(-1) s(-1), which are about 1 order of magnitude larger than silicon. We also demonstrate strong anisotropic transport in black phosphorus, where the mobilities along the armchair direction are about 1 order of magnitude larger than in the zigzag direction. A photocarrier lifetime as long as 100 ps is also determined. These results illustrate that black phosphorus is a promising candidate for future electronic and optoelectronic applications.

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