Excellent characteristics of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with long and narrow grains aligned one-dimension have been experimentally clarified for the first time. The field effect mobility and on-off transition slope of n-channel and p-channel devices were as high as 685 cm 2 V À1 s À1 and 190 mV/decade and 145 cm 2 V À1 s À1 and 104 mV/ decade, respectively. Fluctuations of characteristics were considerably reduced by widening the channel, and uniform characteristics were observed when there were approximately twenty long grains within the channel. These results were obtained when the TFT channel was formed within a region free from grain boundaries formed by head-on collision of laterally growing grains and seeds used to initiate lateral grain growth. Material properties are discussed from the viewpoint of device characteristics.

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New catalysts based on Pd nanoparticles for the hydration of nitriles to amides were investigated. Copper compounds containing oxygen acted as effective promoters in the catalytic system. The catalysts could be used to prepare aromatic and aliphatic amides from the corresponding nitriles. Chloride ions significantly inhibited the catalytic performance.

InGaZnO (IGZO) TFT backplane for large-size high-resolution organic light-emitting diode (OLED) display has been developed. The uniformity of TFT electrical characteristics and stability was improved by the uniform IGZO composition realized by controlling ion bombardment direction. TFT electrical stability was improved by plasma treatments of the front and back channel interfaces. The 55-inch 4K2K OLED display was successfully demonstrated with the backplane fabricated in a generation 8.5 production line.

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