New oscillation phenomena in VO2 crystals were observed. The oscillation is generated in the temperature region of the crystal transition, and its voltage and frequency depend upon the ambient temperature. The waveform of the oscillation is a rectangular pulse.

The formation and electrical properties of the conductive network in RuO2 thick film resistors were investigated. As a result, a RuO2 thick film resistor having a high concentration of RuO2 has conductive chains of RuO2 and metal-like conduction. However, the resistor having a low RuO2 concentration has a reactive Layer that allows it to maintain its conductivity even though there are no conductive paths by mutual contact of RuO2 particles; it also has amorphous, semiconductor-like characteristics.

Switching and oscillation were found in SnO2-VOx-PdO ceramics. This switching does not appear above 60°C. However, under 40°C, it comprises two switching actions and depends upon the ambient temperature. The oscillation is irregular and the amplitude is as great as 30−40 V at room temperature.

No abstract

Oxides of various elements have been added to RuO thick film resistors and the electrical properties of the resultant resistors have been examined.It is found that almost all the oxides of transition metals, rare earths, and antimony used as additivies can closely control the resistivity and TCR ofthe resistors to obtain a required value. In addition, it is found that the principle of superposition applies to the additives.