Severe plastic deformation using high-pressure torsion (HPT) is successfully applied at room temperature to partially stabilized ZrO 2. X-ray diffraction and Raman spectroscopy analyses reveal that appreciable strain is introduced in the sample and a phase transformation with a coherent interface occurs from the metastable tetragonal phase to the monoclinic phase during HPT. The fraction of the stress-induced monoclinic phase increases with straining, reaches a saturation level. Transmission electron microscopy shows that nanograins of high dislocation density but with no twins are formed during HPT.
Si(100) wafers were subjected to severe plastic deformation under a pressure of 24 GPa using high-pressure torsion (HPT). Si wafers were plastically deformed at room temperature. HPT-processed samples were composed of metastable body centered cubic Si-III and rhombohedral Si-XII phases in the initial cubic diamond Si-I. The volume fraction of metastable phases increased with increasing plastic strain. Successive annealing at 873 K led to the reverse transformation of metastable phases. A broad photoluminescence peak centered at about 650 nm appears due to the reverse transformation of Si-III/Si-XII nanograins and the reduction of number of defects in Si-I nanograins.
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