When Ta2O5 dielectric film was deposited on an indium-tin-oxide (ITO)-coated glass substrate by rf reactive sputtering, the blackening of ITO was observed. It was confirmed that the residual gas during sputtering is related to the blackening of ITO. The presputtering in argon-oxygen mixture gas and the following evacuation to basal pressure (less than 1×10-6 Torr) yield Ta2O5 films without ITO blackening.
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