The superior and stable ferroelectric properties of HZO films deposited via ALD were demonstrated for the first time without a post-thermal process, which can be applied to ferroelectric devices where process temperature constraints are required.

complementarymetal-oxide-semiconductor processes, which are very advantageous in terms of device design and fabrication. [2] For this reason, the use of HfO 2 -based ferroelectric thin films in the field of nonvolatile ferroelectric memories such as ferroelectric-field effect transistors, ferroelectric-ramdom acess memory, neuromorphic devices, [3][4][5][6][7] energy storage capacitors [8] and piezoelectric devices [9] are receiving great interest. Specifically, highperformance, nonvolatile ferroelectric memory, and neuromorphic applications require high remanent polarization (P r ) characteristics to achieve a large memory window and a uniform level of ferroelectric properties over multiple operating cycles for the high-reliability characteristics of the memory device. In addi-

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