Extensive reliability and performance characteristics of ultrashort channel CMOS devices with various process conditions for giga-bit DRAM were investigated. Using conventional process with various oxide thicknesses and doping profiles, we fabricated 0.1 pm channel length n+ gate MOSFETs with excellent electrical characteristics. Based on these results, practical device design windows were proposed for 1.5V operating bias. Considering significant improvement of hot carrier lifetime of ring-oscillator, hot-carrier reliability is not a major constraint for L,ff=O.lpm at 1.5V operating bias. 17.6.10-7803-2700-4 $4.00 01995 IEEE IEDM 95-435