Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process. The ZTO thin films are highly transparent (>90% transmittance) in the visible region. The ZTO TFTs fabricated at 400 and 500 • C are operated in enhancement mode. The TFT annealed at 500 • C shows a mobility of 14.11 cm 2 V −1 s −1 , a threshold voltage of 1.71 V, a subthreshold slope of 0.4 V dec −1 and an on-off current ratio greater than 10 8. In addition, we investigated the gate bias stability of the TFT. Positive gate bias results in a positive shift of the threshold voltage due to the charge trapping in the channel/dielectric interface.

Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of metal fluoride aqueous precursor solution examined by thermogravimetric analysis and Raman spectroscopy can easily explain oxide formation. The chemical composition analysed by XPS confirms that the fluorine was doped in the thin films annealed below 250°C. In the IZO:F thin films, a doped fluorine atom substitutes for an oxygen atom generating a free electron or occupies an oxygen vacancy site eliminating an electron trap site. These dual roles of the doped fluorine can enhance the mobility and improve the gate bias stability of the TFTs. Therefore, the transparent flexible IZO:F TFT shows a high mobility of up to 4.1 cm2/V·s and stable characteristics under the various gate bias and temperature stresses.

The absence of a positive family history (PFH) in 10%-25% of patients poses a diagnostic challenge for autosomal dominant polycystic kidney disease (ADPKD). In the Toronto Genetic Epidemiology Study of Polycystic Kidney Disease, 210 affected probands underwent renal function testing, abdominal imaging, and comprehensive and mutation screening. From this cohort, we reviewed all patients with and without an apparent family history, examined their parental medical records, and performed renal imaging in all available parents of unknown disease status. Subsequent reclassification of 209 analyzed patients revealed 72.2% (151 of 209) with a PFH, 15.3% (32 of 209) with disease, 10.5% (22 of 209) with an indeterminate family history, and 1.9% (four of 209) with PFH in retrospect. Among the patients with cases, we found two families with germline mosaicism and one family with somatic mosaicism. Additionally, analysis of renal imaging revealed that 16.3% (34 of 209) of patients displayed atypical PKD, most of which followed one of three patterns: asymmetric or focal PKD with PFH and an identified or mutation (15 of 34), asymmetric and PKD with proven or suspected somatic mosaicism (seven of 34), or focal PKD without any identifiable or mutation (eight of 34). In conclusion, PKD without an apparent family history may be due to disease, missing parental medical records, germline or somatic mosaicism, or mild disease from hypomorphic and mutations. Furthermore, mutations of a newly identified gene for ADPKD, , and somatic mosaicism need to be considered in the mutation-negative patients with focal disease.

Metal-oxide semiconductors have attracted considerable attention as next-generation circuitry for displays and energy devices because of their unique transparency and high performance. We propose a simple, novel and inexpensive 'aqueous route' for the fabrication of oxide thin-film transistors (TFTs) at low annealing temperatures (that is, o200 1C). These results provide substantial progress toward solution-processed metal-oxide TFTs through naturally formed, unique indium complex and post annealing. The fabricated TFTs exhibited acceptable electrical performance with good large-area uniformity at low temperatures. Additional vacuum annealing facilitated the condensation reaction by effectively removing byproduct water molecules and resulted in the activation of the In 2 O 3 TFT at low annealing temperatures, even temperatures as low as 100 1C. In addition, we have demonstrated that the flexible and transparent oxide TFTs on plastic substrates exhibit good resistance to external gate bias stress. INTRODUCTIONMetal-oxide semiconductors (MOSs) are a unique class of materials that have both transparency and electronic conductivity. 1-3 Increasing demand for transparent semiconducting active materials has resulted in increased attention on the MOSs for next-generation electronics, including electronics for use in high-performance, flexible and transparent applications, because of their favorable field-effect mobility, high optical transparency and good environmental stability. 4,5 In the early studies, these materials were primarily prepared using a vacuum process. 6,7 Although the vacuum-based deposition method has advantages, the high fabrication cost and large-area device uniformity restrict its areas of application. We suggest a simple and novel 'aqueous route' for the fabrication of oxide thin-film transistors (TFTs) at low annealing temperatures (that is, o200 1C). These results provide substantial progress toward solutionprocessed metal-oxide TFTs via a unique indium complex (IC) and post annealing. In addition, we have demonstrated that the flexible and transparent oxide TFTs on plastic substrates exhibit good resistance to external gate bias stress.The solution-based synthesis approach is considered a promising solution to the issues of fabrication cost and device uniformity. This