The growth of InAs Quantum Dots (QDs) on InP(100) via droplet epitaxy in a Metal Organic Vapour Phase Epitaxy (MOVPE) reactor is studied. Formation of Indium droplets is investigated with varying substrate temperature, and spontaneous formation of nanoholes is observed for the first time under MOVPE conditions. Indium droplets are crystallized into QDs under Arsenic flow at different temperatures. For temperatures greater than 500ºC, a local etching takes place in the QD vicinity, showing an unexpected morphology which is found to be strongly dependent on the Received: (( ))Revised: (( )) Published online: (( ))

InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a metal organic vapor phase epitaxy (MOVPE) reactor. Formation of metallic indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In0.53Ga0.47As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In0.53Ga0.47As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission electron microscopy investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.

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