(Y,Gd)BO3:Eu3+ and Y(V,P)normalO4:Eu3+ thin-film phosphors were deposited on conventional and corrugated substrates to test their applicability for use in transparent plasma display panels (PDPs). The exact target structure and stoichiometry of Y(V,P)normalO4:Eu3+ and (Y,Gd)BO3:Eu3+ transferred well to the single-phase film by optimizing the deposition conditions. The corrugated substrates consisting of nanorod-type two-dimensional photonic crystal layers enhanced the photoluminescence efficiency, albeit at the expense of transparency. We employed the fact that conventional PDPs would adopt a mixture powder of (Y,Gd)BO3:Eu3+ and Y(V,P)normalO4:Eu3+ as a compromise between luminance and color chromaticity. To achieve this compromise in a thin-film state, we prepared a sandwich-type thin film using (Y,Gd)BO3:Eu3+ and Y(V,P)normalO4:Eu3+ phosphors.

Thin-film ͑Sr,Ba͒ 2 SiO 4 :Eu 2+ phosphors were pulsed-laser deposited on quartz glass, sapphire, and Si wafers. The processing conditions were optimized to reduce substrate temperature during deposition and also to avoid high-temperature postdeposition annealing and reduction. In this study, the maximum processing temperature was reduced to 700°C, which must be lowered even further to produce on-chip phosphor films. The exact composition of the film obtained under the optimum processing conditions was identified by Rietveld refinement analysis, and two-peak emission behavior was investigated based on the exact structure.Thin-film phosphors have drawn considerable attention in an attempt to apply them to various display applications. 1-12 In fact, many sulfide and oxide thin-film phosphors have been developed for use in inorganic electroluminescent devices. Thin-film phosphors have advantages over powders in terms of their superior adhesion properties, high image resolution, good heat resistance, reduced outgassing, and long-term stability. In this regard, various deposition techniques have been employed in the production of thin-film phosphors, including radio frequency ͑rf͒ sputtering, pulsed laser deposition ͑PLD͒, pulsed electron-beam evaporation, and even sol-gel spin coating or spray pyrolysis. 1-12 In particular, thin-film phosphors developed by PLD are of great interest. 1-4 In addition to display applications, thin-film phosphors have been investigated for use in light-emitting diodes ͑LEDs͒. The preferred LED phosphor, Y 3 Al 5 O 12 :Ce 3+ ͑YAG͒ and its variants, already has been successfully developed in a thin-film form using rf magnetron sputtering and PLD techniques. 13,14 The YAG:Ce thin-film phosphors deposited by these techniques require high-temperature processing, either during or after the deposition. For example, at least 1200°C annealing after film deposition is required to achieve a complete crystallization of the YAG:Ce thin films. When the combination of thin-film YAG:Ce phosphors with InGaN chips is the object, breakdown of the InGaN chip at such high temperatures must be avoided.͑Sr,Ba͒ 2 SiO 4 :Eu 2+ phosphors, the luminance and color chromaticity of which are comparable to those of the YAG:Ce phosphor at blue LED excitations, 14-19 have attracted considerable attention for use in white-light-emitting diodes ͑WLEDs͒. Another merit of these phosphors is the ability to tune the emission peak by varying the Sr/Ba ratio. Despite their practical development in the powder form, there has been no attempt to achieve thin-film type ͑Sr,Ba͒ 2 SiO 4 :Eu 2+ phosphors. Our ultimate goal is to develop thinfilm ͑Sr,Ba͒ 2 SiO 4 :Eu 2+ phosphors with a processing temperature that can be lowered in the production of on-chip phosphor films, thereby avoiding breakdown of the InGaN chip. In this study we were not able to secure a processing temperature low enough to avoid InGaN chip breakdown. However, by lowering the maximum processing temperature ͑substrate temperature͒ as low as 700°C and by skipping th...

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