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Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized states strongly change with deformation temperature and during anneal around 0.6 Tm (Tm melting temperature). While part of this effect can be certainly explained by anneal out of point defects, there must be a structural change in the core region of the dislocation, since the dislocation density remains unchanged during anneal.

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We have found the effect of strong influence of magnetic field treatment on the starting stresses of individual dislocations in Czochralski-grown silicon (CZ-Si). It is shown that the exposure of CZ-Si samples with dislocations at room temperature to magnetic field reduces essentially the starting stresses for dislocation motion. The effect is absent in FZ-Si samples. We suppose that magnetic field causes the singlet-triplet transitions in thermally exited states of oxygen complexes in a dislocation core that changes the state of oxygen already situated on dislocations in such a way that the mean binding energy of oxygen with a dislocation is diminished.

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