Extreme UV (EUV) lithography is entering full-scale production of high-end IC chips. This transition gives researchers in academia and industry ample motivation to propose new chemistries that will contribute to alleviating the resolution-line edge roughness-sensitivity trade-off dilemma of EUV lithography. We also have a great interest in the radical chemistry of carbon-fluorine bonds working under EUV and have explored its applicability as a platform for implementing novel EUV resists. While it was checked that the chemical concept is viable by using fluorinated small molecules and polymers, it needed to be upgraded in terms of patterning resolution and sensitivity. Recently, we extended successfully the radical-based strategy to the tin-oxo nano cluster resist concept. Soluble fluorinated tin-oxo clusters could be prepared, and they were cast into thin films from a fluorous solution. When the thin film was exposed to EUV radiation, it lost solubility, resulting in the formation of negative-tone images. Under an EUV lithographic condition, the thin film could be tailored down to 10 nm or smaller sized features. In addition, their unique solubility in chemically orthogonal solvents also enabled the build-up of a bilayer structure composed of a non-fluorinated reactive polymer underlayer without curing. The stacked film structure was found to be helpful for the sensitivity improvement. These results propose another interesting EUV resist candidate possessing unique capabilities in thin film processing.

Triboelectric nanogenerator (TENG) is one of the emerging energy harvesting technologies with the potential to be an alternative energy source. Owing to the various advantages of TENG, such as low cost, simple design, and high applicability, several researchers reported wearable TENG devices that can power electronics by harvesting human motion. However, as the human body has limited movement, the existing wearable TENG devices can only generate low power to turn on the electronics. In this study, a flow ring-based TENG (FR-TENG) is fabricated, which can be applied to wearable devices to generate high voltage and current output by including an opposite charging intermediate layer. By the simulation and experimental results, FR-TENG is optimized to generate a high output, that is, peak open-circuit voltage and closed-circuit current of up to 1020 V and 260 mA, respectively, owing to the electrostatic discharge. By these results, sleeve-type wearable FR-TENG is fabricated which can effectively harvest energy from arm movement. The sleeve-type FR-TENG can generate a high output owing to the working mechanism of FR-TENG; the high output was used to turn on 200 LEDs.