Using LIBS (laser-induced-breakdown-spectroscopy)technology, element percent in ferroalloy can be measured. High energy laser beam focus on high temperature plasma of ferroalloy surface, using fiber spectrometer detected plasma emission spectral lines in the cooling process to determine the type and content in the ferroalloy elements. In the application of quantitative analysis internal standard method in ferroalloy C content, according to the measuring principle built experimental platform, according to Fe for internal standard elements, setting up the calibration curve of C content, and using the curves to ferroalloy samples in a quantitative analysis on the C element. The results show, LIBS internal standard method to determine the relative error of the ferroalloy C content for no more than 10%, verifying the internal standard method used in the determination of the elements in ferroalloy feasibility.

In field aided lateral crystallization process which is one of the low temperature crystallization processes for the amorphous silicon films, the effect of the alternating field (AC voltage) instead of the static field (DC voltage) was investigated. Following the deposition of 2 nm thick Cu catalyst outside of the 5 mm bar patterns in the PECVD amorphous silicon film, the specimen was heated at 500°C in N₂ambient for 5 hours with applying 5 V/cm AC-field along with 30 V/cm DC-field. As compared to the case of 35 V/cm DC-field only, the specimen from both the 30 V/cm DC and 5 V/cm AC resulted in 1.5 times faster crystallization velocity, regardless of the experimental frequency ranges of 100 Hz ~ 50 MHz. Presumably, the enhancement of the crystallization velocity under the combined field is associated with the increase in the flux of the crucial diffusion species, Cu atoms, which govern the overall crystallization velocity due to the agitation effect by the AC-field.