Ditetradecyl-substituted [7]phenacene was prepared and applied in thin-film FET devices, displaying higher mobility compared to parent [7]phenacene.

We have studied the decomposition of methanol-d4 on thin film Al2O3/NiAl(100) under near-ambient-pressure conditions, with varied surface-probe techniques and calculations based on density-functional theory. Methanol-d4 neither adsorbed nor reacted on Al2O3/NiAl(100) at 400 K under ultrahigh vacuum conditions, whereas they dehydrogenated, largely to methoxy-d3 (CD3O*, * denoting adsorbates) and formaldehyde-d2 (CD2O*), on the surface when the methanol-d4 partial pressure was increased to 10−3 mbar and above. The dehydrogenation was facilitated by hydroxyl (OH* or OD*) from the dissociation of little co-adsorbed water; a small fraction of CD2O* interacted further with OH* (OD*) to form, via intermediate CD2OOH* (CD2OOD*), formic acid (DCOOH* or DCOOD*). A few surface carbonates were also yielded, likely on the defect sites of Al2O3/NiAl(100). The results suggest that alumina not only supports metal clusters but also participates in reactions under realistic catalytic conditions. One may consider accordingly the multiple functions of alumina while designing ideal catalysts.

The physical investigation of surfaces and their properties crucially depends on their quality. Such investigations are commonly performed in an ultra-high vacuum environment. Thereby, the transfer of samples among different setups and under ambient conditions is desirable. The usage of a capping layer for the protection of surfaces against contaminations during long-time storage and transfer, and the subsequent temperature-controlled decapping is an established approach. However, a residual-free removal of the capping layer may present a challenge. Here, we systematically investigate the decapping process of a tellurium protected topological insulator Bi2Te3. We give evidence for the material segregation from the contaminated capping layer surface to the substrates. Therefore, a simple, temperature controlled decapping is not sufficient. We demonstrate that near perfect surfaces can be reliably obtained even after long-time storage through a combination of an initial argon ion sputtering process and a following heating for decapping. This approach is suitable for dedicated analysis systems as well as for industrial applications, large throughput of samples of arbitrary shapes, and is easily implemented in existing setups.