No abstract

No abstract

This paper reports a 2D analysis ofthe qvasi-saturation behaviorof GH-Sic DMOS devices considering surface trapping effect. Based on the sfudy. in the pre-quasi-saturation region, the drain current is predominantly determined by the surface trapping efTect. In the quasi-saturation region, the drain current is mainly influenced by the elehron mobility in the substrate region. 6H-Sicmaterial is receiving a lot of attention for hih-temperature and high-power applications owing to its large bandgap, high thermal conductivity, and high breakdown voltage [l][2]. Using 6H-Sic, MOS devices have been fabricated (31. For DMOS devices, quasi-saturation behavior is important [4].In this paper, a 2D simulation study on the quasi-saturation behavior of GH-Sic DMOS devices considering surface trapping effect is reported. It will be shown that in the pre-quasi-saturation region, the drain current is predominantly determined by the surface trapping effect. In the quasi-saturation region, the drain current is mainly influenced by the electron mobility in the substrate tegion. In the following sections, the device structure of the 6H-SIC DMOS under study is described first, followed by the quasi-saturation behavior. summary Consider the cross section of a GH-SIC PMOS device (41 as shown in Fig. 1. The DMOS device