We report the first high-pressure single-crystal structures of hybrid perovskites. The crystalline semiconductors (MA)PbX3 (MA = CH3NH3+, X = Br– or I–) afford us the rare opportunity of understanding how compression modulates their structures and thereby their optoelectronic properties. Using atomic coordinates obtained from high-pressure single-crystal X-ray diffraction we track the perovskites’ precise structural evolution upon compression. These structural changes correlate well with pressure-dependent single-crystal photoluminescence (PL) spectra and high-pressure bandgaps derived from density functional theory. We further observe dramatic piezochromism where the solids become lighter in color and then transition to opaque black with compression. Indeed, electronic conductivity measurements of (MA)PbI3 obtained within a diamond-anvil cell show that the material’s resistivity decreases by 3 orders of magnitude between 0 and 51 GPa. The activation energy for conduction at 51 GPa is only 13.2(3) meV, suggesting that the perovskite is approaching a metallic state. Furthermore, the pressure response of mixed-halide perovskites shows new luminescent states that emerge at elevated pressures. We recently reported that the perovskites (MA)Pb(BrxI1–x)3 (0.2 < x < 1) reversibly form light-induced trap states, which pin their PL to a low energy. This may explain the low voltages obtained from solar cells employing these absorbers. Our high-pressure PL data indicate that compression can mitigate this PL redshift and may afford higher steady-state voltages from these absorbers. These studies show that pressure can significantly alter the transport and thermodynamic properties of these technologically important semiconductors.

Pressure-induced changes in the electronic structure of two-dimensional Cu-based materials have been a subject of intense study. In particular, the possibility of suppressing the Jahn-Teller distortion of d(9) Cu centers with applied pressure has been debated over a number of decades. We studied the structural and electronic changes resulting from the application of pressures up to ca. 60 GPa on a two-dimensional copper(II)-chloride perovskite using diamond anvil cells (DACs), through a combination of in situ powder X-ray diffraction, electronic absorption and vibrational spectroscopy, dc resistivity measurements, and optical observations. Our measurements show that compression of this charge-transfer insulator initially yields a first-order structural phase transition at ca. 4 GPa similar to previous reports on other Cu(II)-Cl perovskites, during which the originally translucent yellow solid turns red. Further compression induces a previously unreported phase transition at ca. 8 GPa and dramatic piezochromism from translucent red-orange to opaque black. Two-probe dc resistivity measurements conducted within the DAC show the first instance of appreciable conductivity in Cu(II)-Cl perovskites. The conductivity increases by 5 orders of magnitude between 7 and 50 GPa, with a maximum measured conductivity of 2.9 × 10(-4) S·cm(-1) at 51.4 GPa. Electronic absorption spectroscopy and variable-temperature conductivity measurements indicate that the perovskite behaves as a 1.0 eV band-gap semiconductor at 39.7 GPa and has an activation energy for electronic conduction of 0.232(1) eV at 40.2 GPa. Remarkably, all these changes are reversible: the material reverts to a translucent yellow solid upon decompression, and ambient pressure powder X-ray diffraction data taken before and after compression up to 60 GPa show that the original structure is maintained with minimal hysteresis.

Lattice compression allows for systematic structural tuning without changing composition. Halide perovskites are a large and diverse family of solids, which have enormous potential for applications in energy capture, storage, and utilization. Notably, they have soft lattices and their photophysical and transport properties exhibit a large pressure response. In this Perspective, we highlight how pressure can alter their electronic landscapes, affect excited-state dynamics, and afford new structures not accessible through conventional syntheses. We further discuss how the insight we gain from high-pressure studies expands the scope of these versatile materials in current and future energy applications.

We report the metallization of the hybrid perovskite semiconductor (MA)PbI (MA = CHNH) with no apparent structural transition. We tracked its bandgap evolution during compression in diamond-anvil cells using absorption spectroscopy and observed strong absorption over both visible and IR wavelengths at pressures above ca. 56 GPa, suggesting the imminent closure of its optical bandgap. The metallic character of (MA)PbI above 60 GPa was confirmed using both IR reflectivity and variable-temperature dc conductivity measurements. The impressive semiconductor properties of halide perovskites have recently been exploited in a multitude of optoelectronic applications. Meanwhile, the study of metallic properties in oxide perovskites has revealed diverse electronic phenomena. Importantly, the mild synthetic routes to halide perovskites and the templating effects of the organic cations allow for fine structural control of the inorganic lattice. Pressure-induced closure of the 1.6 eV bandgap in (MA)PbI demonstrates the promise of the continued study of halide perovskites under a range of thermodynamic conditions, toward realizing wholly new electronic properties.