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Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.

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In the traditional Kirsch solution of stress field induced by tunneling in rock mass, the body force was not taken into consideration, and therefore the Kirsch solution is limited to demonstrate stress redistribution of deep-buried tunnel. In order to consider the effect of body force on the stress redistribution induced by tunneling, a new secondary stress field solution for tunnel between shallow and deep tunnel (called subdeep tunnel) is developed with elastic mechanics and complex function employed. The stress field from theoretical solution is verified by numerical models, and the results showed good agreements with each other. This solution can be the basic theory in the analysis of the stress and field of subdeep tunnel, which have not been valuated through theoretical study yet.

Timing can be processed explicitly or implicitly. Temporal orienting is a typical implicit timing through which we can anticipate and prepare an optimized response to forthcoming events. It is, however, not yet clear whether mechanisms such as temporalpulse accumulation and attentional gating (more attention, more accumulated temporal pulses) underly the internal representations of temporal orienting, as in explicit timing. To clarify this, a dual-task paradigm, consisting of a temporal orienting and an interference task, was adopted. Consistent with the temporal-pulse-accumulation and attentional-gating model, reaction times to the target detection of temporal orienting increased as the interference stimuli were temporally closer to the target, i.e., a location effect for temporal orienting. This effect is likely due to attention being diverted away from temporal orienting to monitor the occurrence of the interference stimuli for a longer time, resulting in greater temporal pulse loss and less accurate temporal orienting for conditions with later interference stimuli. The temporal-pulse-accumulation aspect in temporal orienting received further support by taking an explicit duration reproduction (containing a second temporal-pulse accumulation) as the interference task. On the one hand, temporal orienting became less accurate with increased temporal-pulse-accumulation overlaps between the dual tasks; on the other hand, two-way (one for temporal orienting and the other for duration reproduction), rather than oneway, location effects were observed, implying processing conflicts between the two temporal-pulse accumulations. Taken together, these results suggest that implicit and explicit timing may share common mechanisms upon internal temporal representations.