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A method for forming thin films of the Cu2SnS3 compound homogeneous in phase composition for use in solar cell devices is proposed. The Cu-Sn alloy layers deposited by thermal spraying in vacuum were annealed in sulfur vapor in a graphite chamber of the quasi-closed volume type. Using X-ray phase analysis, the optimal conditions for the formation of Cu2SnS3 films homogeneous in phase composition were found: annealing temperature 450 °C, sulfur vapor pressure ∼ 0.2 torr. The sulfide layers obtained in this way in their elemental composition correspond to the Cu2SnS3 compound stoichiometry. Cu2SnS3 films have an optical band gap of 1 eV, and the absorption coefficient in the visible region of the spectrum is 2·105 cm –1.