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Dual bipolar resistive switching characteristics were observed in the Pt/DyMn2O5/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn2O5 films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper.

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The influence of top electrode material on the resistive switching properties of MnO 2 -based memory film using Pt as a bottom electrode was investigated in this study. In comparison with Pt/ MnO 2 /Pt and Al/ MnO 2 /Pt devices, the Ti/ MnO 2 /Pt device exhibits resistive switching current-voltage (I-V ) curve, which can be traced and reproduced more than 10 5 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, transmission electron microscopy analyses are used to confirm the crystalline structure of MnO 2 on Pt bottom electrode. Secondary ion mass spectrometry reveals a change of oxygen distribution in MnO 2 thin film due to material characteristic of variant top electrodes. We suggest that the interface between MnO 2 and electrodes play an important role on the resistive switching behaviors.

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