High flexibility, porosity, and antibacterial activity are extremely desired for wearable health monitoring, which is beneficial to simultaneously promote wearing comfort and safety. In this study, an antibacterial nanofibers‐based triboelectric generator (AN‐TENG) composed of the flexible chitosan/polyvinylpyrrolidone modified with halloysite nanotubes (CTS/PVP/HNTs) nanofibers and cube‐arrays structured Ecoflex film is proposed for simultaneously energy harvesting and self‐powered human motion monitoring. The open‐circuit voltage (280 V), short‐circuit current (3.98 μA), and transferred charge (51 nC) of the CTS/PVP/HNTs nanofibers TENG at the optimal compound concentration are increased by 90.8%, 86.92%, and 96.2%, respectively, compared to the CTS/PVP nanofibers one (size: 3 cm × 3 cm, mechanical force: 10 N @1 Hz), revealing good real‐time monitoring ability for human wrist, elbow, and finger motion. An antibacterial test is carried out to evaluate the antibacterial activity and the antibacterial rate of the nanofibers against Escherichia coli (ATCC 8739) and Staphylococcus aureus (ATCC 6538) based on the current national standard GB/T 31402–2015, indicating good antibacterial properties of the nanofibers. This research offers an ingenious strategy to establish an antibacterial nanofibers‐based TENG for self‐powered motion monitoring and energy harvesting and offers a new insight to improve the practical security of wearable electronic devices.

Graphene is a promising candidate for the next-generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C 60 /bismuth telluride/C 60 /graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400-1800 nm; the responsivity peak is 10 6 A W −1 ; and the peak detection rate and peak response speed reach 10 14 Jones and 250 μs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20-30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large-scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process.