Commercial photodetectors based on silicon are extensively applied in numerous fields. Except for their high performance, their maximum absorption wavelength is not over than 1100 nm and incident light with longer wavelengths cannot be detected; in addition, their cost is high and their manufacturing process is complex. Therefore, it is meaningful and significant to extend absorption wavelength, to decrease cost, and to simplify the manufacturing process while maintaining high performance for photodetectors. Due to the properties of size-dependent bandgap tunability, low cost, facile processing, and substrate compatibility, solution-processed colloidal quantum dots (CQDs) have recently gained significant attention and become one of the most competitive and promising candidates for optoelectronic devices. Among these CQDs, lead chalcogenide CQDs are getting very prominent and are widely investigated. In this paper, the recent progress of infrared (IR) photodetectors based on lead sulfide (PbS), lead selenide (PbSe), and ternary PbS x Se 1−x CQDs, and their underlying concepts, breakthroughs, and remaining challenges are reviewed, thus providing guidance for designing high-performance quantum-dot IR photodetectors.

Solution-phase, template-free synthesis of PbI2 and MAPbI3 nano/microtubes and their applications in high-sensitivity photodetectors are presented.

To enhance the device performance of all-inorganic perovskite photodetectors via constructing both bilayer heterostructure and bipolar carrier transporting channels.

No abstract

Colloidal quantum dots (CQDs) are very promising nanomaterials for optoelectronics due to their tunable bandgap and quantum confinement effect. All-inorganic CsPbX 3 (X=Br, Cl and I) perovskite nanocrystals (NCs) have attracted enormous interests owing to their promising and exciting applications in photovoltaic devices. In this paper, all-solution-processed UV-IR broadband trilayer photodetectors ITO/ZnO/PbS/CsPbBr 3 /Au and ITO/ZnO/CsPbBr 3 /PbS/Au with high performance were presented. The role of CsPbBr 3 QDs layer as the carriers-extracting layer in the trilayer devices was discussed. As compared with bilayer device ITO/ZnO/PbS/Au, both the dark currents and photocurrents under illumination from trilayer photodetectors are enhanced, but the trilayer photodetector ITO/ZnO(80 nm)/PbS(150 nm)/CsPbBr 3 (50 nm)/Au showed a maximum specific detectivity (D * ) of 8.3×10 12 Jones with a responsivity (R) of 35 A W −1 under 1.6 mW cm −2 980 nm illumination. However, another trilayer photodetector ITO/ZnO(80 nm)/CsPbBr 3 (50 nm)/ PbS(150 nm)/Au showed a maximum D * of 1.73×10 12 Jones with a R of 5.31 A W −1 under 6.8 mW cm −2 405 nm illumination. Further, the underlying mechanism for the enhanced performance of trilayer photodetectors was discussed. Thus, this strategy of all-solution-processed heterojunction configuration paves a facile way for broadband photodetectors with high performance.