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VCSEL (vertical cavity surface emitting laser) is a promising optoelectronic device, but its high manufacturing cost limits its scope of applications. Growing on larger size wafers is an effective way to reduce the cost. However, the growth rate uniformity needs to be optimized to ensure the uniformity of the devices’ performance over the wafers. This paper investigates the factors which influence the growth rate uniformity using an 8 × 6 inch planetary reactor through experiments and simulations. At a carrier gas flow rate of 37 slm, an AsH3 flow rate of 600 sccm, an AsH3 flow rate ratio of 100:500, and a ceiling temperature of 175 °C, the growth rate uniformity of the AlGaAs layer with a relative standard deviation of 0.16%, 1σ, was obtained over the 6-inch wafers. The uniformity of the DBR stop band center and VCSEL quantum well wavelength with standard deviations of 0.142% and 0.023%, 1σ, were received over the 6-inch wafers, respectively. Based on the optimized results, 99.95% of VCSEL devices with wavelengths of 940 ± 5 nm were realized over the 6-inch wafers.