No abstract

This study proposes an improved broadband equivalent circuit model for millimeter‐wave and illustrates that the real part of the Z‐parameter (like Z21, Z31, and Z41) cannot be neglected. This improved model contains multiple‐coupled inductors on silicon with effective substrate current loops. And it is fabricated and measured in four‐port and in two‐port on the basis of 0.18 μm and 40 nm CMOS technology, respectively. Moreover, this proposed model is applied to a 22–31 GHz three common‐source stages differential gm‐boost low‐noise amplifier for 5G communication in 65 nm CMOS process. According to the measurement, the minimum noise figure is 2.5 dB at 23 GHz and the maximum gain is 22.2 dB at 24.5 GHz. The chip size is 0.5 mm × 0.92 mm with all pads.