This study presents a new model for point-defect modification in III-V-N alloys through first-principle calculations and several validation experiments conducted in our previous study, which explain the enhanced crystallinity of III-V-N alloys caused by proton irradiation and rapid thermal annealing (RTA). Validation experiments clarified that the conversion efficiency of the GaAsPN solar cell increased after proton irradiation followed by RTA, whereas that of the GaP solar cell decreased after the same process. Thus, the improved crystallinity of the GaAsPN alloy by this process is attributed to the decrease in nitrogen-related point defects in the crystal. The detailed annihilation mechanism of the nitrogen-related point defect was then studied using first-principle calculations demonstrating that the representative nitrogen-related point defects can change to a lower-energy state when a vacancy forms at its neighboring group V site, leading to the annihilation of the defects. It was concluded that vacancies created by proton irradiation enhance the annihilation of nitrogen-related point defects.

This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid thermal annealing enhances the PL peak intensity of GaPN alloys, whereas major photovoltaic III-V materials such as GaAs and InGaP degrade their crystal quality by irradiation damage. Atomic force microscopy and transmission electron microscopy reveal no degradation of structural defects. GaAsPN solar cell test devices are then fabricated. Results show that the conversion efficiency increases by proton/electron irradiation, which is mainly caused by an increase in the short-circuit current.