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To enhance the toughness and electrical insulation properties of cured epoxy, carboxyl-terminated polybutadiene (CTPB) liquid rubber was used to modify epoxy in this study, and the thermal conductivity, mechanical and dielectric properties of modified epoxy were investigated. The results indicate that the CTPB-epoxy exhibits higher impact strength and lower dielectric constant and loss compared with pure epoxy. Further, hexagonal boron nitride (hBN) was used to reinforce epoxy modified with 20 phr CTPB. It is found that compared with the hBN/epoxy under the same filler loading, the heat conductive hBN/CTPB/epoxy possesses a lower dielectric permittivity and dissipation factor in all frequency ranging from 10 2-10 7 Hz, a higher electrical resistivity and dielectric breakdown strength, and improved mechanical toughness. Therefore, the prepared hBN/CTPB/epoxy composites are potentially useful in practical electrical insulation applications.

To suppress the high dielectric loss of graphene oxide (GO)/poly(vinylidene fluoride) (PVDF) while maintaining high dielectric constant (high- k) near the percolation threshold, in this study, GO nanosheets coated with polydopamine (PDA) were integrated into PVDF to investigate the effects of the PDA shell and its concentrations on the dielectric properties of the nanocomposites. The results indicate that the dissipation factor and conductivity of the GO@PDA/PVDF are significantly suppressed to very low values compared with the pristine GO/PVDF composites, attributable to the PDA interlayer between the GO nanosheets which prevents them from direct contact with each other and remarkably reduces the leakage loss. Furthermore, activation energies of the GO/PVDF and GO@PDA/PVDF composites were calculated as 1.247 and 0.884 eV, respectively, indicating that the presence of PDA interlayer reduces the relaxation activation energy and makes the relaxation occur at low temperature for the GO@PDA/PVDF. The prepared GO@PDA/PVDF nanocomposites with high- k but low loss have potential applications in microelectronic engineering.