Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

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A high prevalence of excessive daytime sleepiness and poor sleep quality has been reported in adolescents, but the effects of social jetlag on sleep quality and daytime sleepiness are unclear. Therefore, we assessed the association of sleep and eating patterns with daytime sleepiness and sleep quality among a total of 756 Japanese high school students. Participants completed the Pittsburgh Sleep Quality Index to evaluate sleep quality, the Pediatric Daytime Sleepiness Scale to evaluate daytime sleepiness, and an 8-day sleep diary. Data on average sleep duration, social jetlag, midsleep on free days sleep corrected, and the differences in the first and last meal timing between school days and non-school days were obtained from participants' sleep diaries. The results reveal that social jetlag is associated with differences in the first meal timing between school days and non-school days, and that social jetlag of more than 2 hr is associated with extremely poor sleep quality and excessive daytime sleepiness in Japanese high school students. Our findings suggest that reducing social jetlag to within a 2-hr window is important to prevent poor sleep quality and excessive daytime sleepiness for this population.

This paper reports that ~10-nm-thick iron selenide (FeSe) thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe has a metallic electronic structure that has been confirmed by photoemission spectroscopy and first-principles calculations. This apparent contradiction is explained by potential barriers formed in the conduction band. Very thin FeSe epitaxial films with various atomic composition ratios ([Fe]/[Se]) were fabricated by molecular beam epitaxy and classified into two groups with respect to lattice strain and electrical properties. Lattice parameter a increased and lattice parameter c decreased with increasing [Fe]/[Se] up to 1.1 and then a levelled off and c began to decrease at higher [Fe]/[Se]. Consequently, the FeSe films had the most strained lattice when [Fe]/[Se] was 1.1, but these films had the best quality with respect to crystallinity and surface flatness. All the FeSe films with [Fe]/[Se] of 0.8-1.9 exhibited insulator-like behavior, but the temperature dependences of their electrical resistivities exhibited different activation energies E a between the Se-rich and Fe-rich regions; i.e., E a were small (a few meV) up to [Fe]/[Se]=1.1 2 but jumped up to ~25 meV at higher [Fe]/[Se]. The film with [Fe]/[Se]=1.1 had the smallest E a of 1.1 meV and exhibited an insulator-superconducting transition at 35 K with zero resistance under gate bias.The large E a of the Fe-rich films was attributed to the unusual lattice strain with tensile in-plane and relaxed out-of-plane strains. The large E a of films with [Fe]/[Se]>1.1 resulted in low mobility with a high potential barrier of ~50 meV in the conduction band for percolation carrier conduction compared with that of the [Fe]/[Se]=1.1 film (~17 meV). Therefore, the Fe-rich films exhibited remarkable insulator-like behavior similar to a semiconductor despite their metallic electronic structure. The high potential barrier of Fe-rich films is tentatively attributed to the presence of large amounts of excess Fe, which could plausibly cause a broad superconducting transition without zero resistance under gating.