The density and thermal conductivity of a high-purity silicon melt were measured over a wide temperature range including the undercooled regime by non-contact techniques accompanied with electromagnetic levitation (EML) under a homogeneous and static magnetic field. The maximum undercooling of 320 K for silicon was controlled by the residual impurity in the specimen, not by the melt motion or by contamination of the material. The temperature dependence of the measured density showed a linear relation for temperature as:where T m is the melting point of silicon. A periodic heating method with a CO 2 laser was adopted for the thermal conductivity measurement of the silicon melt. The measured thermal conductivity of the melt agreed roughly with values estimated by a Wiedemann-Franz law.
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