Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the simultaneous amplification of dark current. A gate-controlled graphene-silicon Schottky junction photodetector that exhibits a high on/off photoswitching ratio (≈10 ), a very high photoresponsivity (≈70 A W ), and a low dark current in the order of µA cm in a wide wavelength range (395-850 nm) is demonstrated. The photoresponsivity is ≈100 times higher than that of existing commercial photodetectors, and 7000 times higher than that of graphene-field-effect transistor-based photodetectors, while the dark current is similar to or lower than that of commercial photodetectors. This result can be explained by a unique gain mechanism originating from the difference in carrier transport characteristics of silicon and graphene.
Ternary logic circuit has been studied for several decades because it can provide simpler circuits and subsequently lower power consumption via succinct interconnects. We demonstrated a ternary full adder exhibiting a low power-delay-product of ~10-16 J, which is comparable with the binary equivalent circuit. The ternary full adder was modeled using device parameters extracted from the experimentally demonstrated multi-Vth ternary graphene barristors.
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