This work investigates the impact of STIW (the width of shallow-trench-isolation) on DC behavior of nano-scale device. Based on theoretical analysis, several devices with different STIW and fingers based on 65nm CMOS process were designed. The test results prove that it is very important to consider the influence of STIW especially for threshold voltage model of nano-scale device with one finger.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.