In order to explore the flexural behavior of CFRP reinforced pre-stressed concrete (PC) beams with initial cracks, 6 pre-tensioned beams were manufactured. Then the beams were pre-loaded to crack with 40% and 60% ultimate load respectively, and the beams were strengthened by CFRP under the conditions of load holding and fully unloaded. After that, the four-points bending tests were performed, and beam section strains, flexural capacities and cracks were analyzed. The results demonstrate that the ultimate load of CFRP reinforced beams increased by 10%~18%, and the ultimate loads of CFRP reinforced load holding beams were 3% and 6% lower than that of CFRP reinforced non-destructive beam, and the inhibiting effect of CFRP on cracks was weakened, the hysteresis strains should be considered for them. In this paper, the fiber hysteresis strains were calculated by the method of full section decompression moment, and the flexural capacities of CFRP reinforced PC beams were calculated, which are in good agreement with the test results.

We presented a method for measuring the topological charge of a Fractional optical vortex (FOV) by a ring-type multi-pinhole interferometer (RMPI). We retrieved the sampled phase of the FOV passing through a ring-type multi-pinhole plate from the Fourier transform of a single far-field diffraction intensity pattern, and found the phase of FOV around the center approximately be linear with the azimuthal angle, the slope of the phase to the azimuthal angle at the linear part is equal to the topological charge of the FOV. Thus we proposed a method for measuring the l state and determining orbital angular momentum (OAM) of a FOV based on the property.

Transparent conducting Ga-doped ZnO (ZnO∶Ga) thin films with high transparency and relatively low resistivity have been successfully prepared on ZnO-buffered Polyimide (PI) by DC magnetron sputtering at room temperature. Structural, morphological, stress, optical and electrical proerties of ZnO∶Ga films are investigated. Experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis. Sputtering pressure plays an important role on the electrical resistivity of flexible ZnO∶Ga films. When sputteting pressure increases from 2 Pa to 6 Pa, the resistivity of the deposited films initially decreases and then slightly increases. At the optimum sputtering pressure of 4 Pa, the lowest resistivity of 4.3×10-4Ω•㎝ is obtained. All the filma present a high transmittance over 90％ in limit spectral range.

Zinc oxide (ZnO) the film is a new type of transparent conductive oxides (TCO) material; it has a green environmental application prospect and hopeful to be substitution of indium tin oxide, so it has been the research focus of TCO materials. The rare earth ion like Yb3+, and Ho3+, Er3+shall be applied to satisfy the up-conversion function, and rare earth elements doped ZnO transparent conductive films will prepared. The play is to study the mechanism of up-conversion and energy transitions that the rare earth ions in the ZnO transparent conductive film. Through the theoretical analysis with the performance of the zinc oxide thin films explore optimization scheme, and aim to prepare out doped-ZnO and transparent conductive film that have both excellent photoelectric performance and up-conversion function. This new type of ZnO transparent conductive film with up-conversion function, it will have important theoretical significance in production of green environment materials and good application prospect in the field of sole cells, photoelectric detection luminescent device and so on.