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This study introduces an enhanced thermal management strategy for efficient heat dissipation from GaN power amplifiers with high power densities. The advantages of applying an advanced liquid-looped silicon-based micro-pin fin heat sink (MPFHS) as the mounting plate for GaN devices are illustrated using both experimental and 3D finite element model thermal simulation methods, then compared against traditional mounting materials. An IR thermography system was equipped to obtain the temperature distribution of GaN mounted on three different plates. The influence of mass flow rate on a MPFHS was also investigated in the experiments. Simulation results showed that GaN device performance could be improved by increasing the thermal conductivity of mounting plates’ materials. The dissipated power density of the GaN power amplifier increased 17.5 times when the mounting plate was changed from LTCC (Low Temperature Co-fired Ceramics) (k = 2 Wm−1 K−1) to HTCC (High-Temperature Co-fired Ceramics) (k = 180 Wm−1 K−1). Experiment results indicate that the GaN device performance was significantly improved by applying liquid-looped MPFHS, with the maximum dissipated power density reaching 7250 W/cm2. A thermal resistance model for the whole system, replacing traditional plates (PCB (Printed Circuit Board), silicon wafer and LTCC/HTCC) with an MPFHS plate, could significantly reduce θjs (thermal resistance of junction to sink) to its theoretical limitation value.

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