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A triple band-notched UWB monopole antennas is presented for flexible electronics. To enhance the flexibility, ultra-thin liquid crystal polymer with 50 μm thickness is used as the substrate. The antennas are constituted by swallow tail radiation patch and trapezoid ground. Moreover, band-notched characteristic is realised by etching different sized elliptic single complementary split-ring resonators on the radiation patch. An improved triple band-notched UWB antenna with notched-frequency bands at 3.7-4.2 GHz, 5.15-5.35 GHz, and 5.725-5.825 GHz are designed by a novel capacitance compensation method. The measured radiation patterns indicate that the antennas are an omni-directional antenna both at flat and bent circumstances. The occupied area of antenna is 27 × 21 mm.

Abstract-An approach for the microwave nonlinear device modeling technique based on a combination of the conventional equivalent circuit model and support vector machine (SVM) regression is presented in this paper. The intrinsic nonlinear circuit elements are represented by Taylor series expansions, coefficients of which are predicted by its support vector regression (SVR) model. Example of a SiC MESFET nonlinear model is demonstrated, and good results is achieved.

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attractive that single-to-multiple channel wavelength conversion can be potentially implemented by appropriately changing the number of the CW waves. For this fiber, the dispersion changes is very small over a wavelength range of over 100 nm, the quasi phase matching is maintained automatically. Therefore, it is expected that MF will play an important role in wavelength conversion, especially in single-to-multiple channel wavelength converter. circuit (CSEC). And a new extraction procedure for the modified SEC parameters is also proposed. The calculated S-parameters using the modified SEC model (MSEC) fit the measured ones very well up to 20 GHz. ABSTRACT: The frequency-dependence of parasitic resistances (R s and R d ) for 4H-SiC power MESFETs is empirical modeled by adding two disperse parameters based on conventional small-signal equivalent