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The influence of aluminum concentration in an Al(x)Ga(1-x)As window layer on the performance of Al(x)Ga(1-x)As/GaAs photocathodes was investigated. Three types of transmission-mode photocathode materials with different aluminum concentrations were designed for the comparative research. The surface photovoltage technique was applied to prepare samples. After the Cs-O activation process, spectral response curves of Al(x)Ga(1-x)As/GaAs photocathodes were obtained. Comparative studies show that a higher aluminum composition in the window layer is beneficial to improve the response of Al(x)Ga(1-x)As/GaAs photocathodes in the shortwave region. The surface photovoltage calculation formula of photocathode materials was put forward and used to obtain key performance parameters of Al(x)Ga(1-x)As/GaAs photocathodes by fitting calculations. Through calculations, the Al(x)Ga(1-x)As/GaAs interface recombination velocity, the minority carrier diffusion length of the window layer, and the emission layer were deduced, and there is a positive correlation between the aluminum composition in the window layer and the Al(x)Ga(1-x)As/GaAs interface recombination velocity, which is negative with the performance of photocathodes.

In order to characterize the spectral response of transmission-mode alkali telluride photocathodes, a spectral response measurement system for image intensifiers working from the vacuum-ultraviolet to ultraviolet band is developed. Using this system, the transmittance curves of usual window materials such as quartz, MgF2, and sapphire selected to prepare alkali telluride photocathodes are measured. In addition to the transmittance test function, the spectral response of image intensifiers based on transmission-mode alkali telluride photocathodes, such as Cs2Te, Rb2Te, Cs-K-Te, and Rb-K-Te photocathodes, under the excitation light from 115 to 400 nm is measured. The measured results show that the longwave cutoff wavelength of the Rb2Te photocathode is 313 nm, while that of the Cs2Te photocathode is 342 nm, which could be ascribed to the reduced cathode work function, inversely proportional to the atomic number of the alkali element in uni-alkali telluride photocathodes. Besides, the spectral response values of Cs-K-Te and Rb-K-Te photocathodes are greater than those of Cs2Te and Rb2Te photocathodes, and this case is similar to the multialkali effect of alkali antimonide photocathodes. The cutoff wavelength can get shorter through the combination with an additional K element. Compared with the Rb-K-Te photocathode with the shorter cutoff wavelength, the Cs-K-Te photocathode can achieve higher sensitivity.

The surface Cs–O activation process directly determines quantum efficiency and stability of negative-electron-affinity photocathodes. To investigate the effects of excessive Cs and O supply on activation and to explore a more effective Cs–O activation recipe, Cs–O activation experiments of GaAs(100) photocathodes are carried out based on the current-driven solid Cs and O dispensers. By a comparison of differences in activation photocurrent, quantum efficiency, and photocurrent decay, it is found that the recipe of excessive O and non-excessive Cs is not suitable for activating GaAs photocathodes, while the recipe of continuous and completely excessive Cs along with intermittent and non-excessive O can achieve the most excellent photoemission performance, including the highest quantum efficiency in the long-wave threshold region and best stability under intense light irradiation after activation. Furthermore, this improved activation recipe with the least Cs–O alternating cycles is easier to operate. Combined with density functional calculations and dipole layer model, it is found that the activation recipe of completely excessive Cs and non-excessive O can form effective dipoles to the greatest extent, and avoid the direct interaction between As atoms and O atoms to form As–O–Ga oxides on the GaAs(100) reconstructed surface.