Rubrene single crystals have received a lot of attention for their great potential in electronic and wearable nanoelectronics due to their high carrier mobility and excellent flexibility. While they exhibited remarkable electrical performances, their intrinsic potential as photon detectors has not been fully exploited. Here, we fabricate a sensitive and ultrafast organic phototransistor based on rubrene single crystals. The device covers the ultraviolet to visible range (275–532 nm), and the responsivity and detectivity can reach up to ∼4000 A W–1 and 1011 jones at 532 nm, respectively. Furthermore, the response times are highly gate-tunable down to sub-90 μs, and the cutoff frequency is ∼4 kHz, which is one of the fastest organic material-based phototransistors reported so far. Equally important is that the fabricated device exhibits stable light detection ability even after 8 months, indicating great long-term stability and excellent environmental robustness. The results suggest that the high-quality rubrene single crystal may be a promising material for future flexible optoelectronics with its intrinsic mechanical flexibility.

Organic materials exhibit efficient light absorption and low‐temperature, large‐scale processability, and have stimulated enormous research efforts for next‐generation optoelectronics. While, high‐performance organic devices with fast speed and high responsivity still face intractable challenges, due to their intrinsic limitations including finite carrier mobility and high exciton binding energy. Here an ultrafast and highly sensitive broadband phototransistor is demonstrated by integrating high‐quality pentacene single crystal with monolayer graphene. Encouragingly, the −3 dB bandwidth can reach up to 26 kHz, which is a record‐speed for such sensitized organic phototransistors. Enormous absorption, long exciton diffusion length of pentacene crystal, and efficient interfacial charge transfer enable a high responsivity of >105 A W−1 and specific detectivity of >1011 Jones. Moreover, self‐powered weak‐light detection is realized using a simple asymmetric configuration, and the obvious zero‐bias photoresponses can be displayed even under 750 nW cm−2 light intensity. Excellent response speed and photoresponsivity enable high‐speed image sensor capability in UV‐Vis ranges.  The results offer a practical strategy for constructing high‐performance self‐powered organic hybrid photodetectors, with strong applicability in wireless, weak‐light detection, and video‐frame‐rate imaging applications.

Organic single crystals (OSCs) have attracted increasing interest in advanced optoelectronical devices, expecially for flexible and wearable devices, due to their high carrier mobility and intrinsic mechanical flexibility. Currently, remarkable...

Organic molecules have attracted intense attention as the promising candidates in future large-area, low manufacturing cost and flexible optoelectronic devices. However, limited to their short exciton diffusion length, low mobility...

Hybrid systems have recently attracted increasing attention, which combine the special attributes of each constitute and create interesting functionalities through multiple heterointerface interactions. Here, we design a two-dimensional (2D) hybrid phototransistor utilizing Janus-interface engineering, in which the WSe 2 channel combines light-sensitive perovskite and spontaneously polarized ferroelectrics, achieving collective ultrasensitive detection performance. The top perovskite (BA 2 (MA) 3 Pb 4 I 13 ) layer can absorb the light efficiently and provide generous photoexcited holes to WSe 2 . WSe 2 exhibit p-type semiconducting states of different degrees due to the selective light-operated doping effect, which also enables the ultrahigh photocurrent of the device. The bottom ferroelectric (Hf 0.5 Zr 0.5 O 2 ) layer dramatically decreases the dark current, which should be attributed to the ferroelectric polarization assisted charge trapping effect and improved gate control. As a whole, our phototransistors show excellent photoelectric performances across the ultraviolet to near-infrared range (360−1050 nm), including an ultrahigh ON/OFF current ratio > 10 9 and low noise-equivalent power of 1.3 fW/Hz 1/2 , all of which are highly competitive in 2D semiconductor-based optoelectronic devices. In particular, the devices show excellent weak light detection ability, where the distinguishable photoswitching signal is obtained even under a record-low light intensity down to 1.6 nW/cm 2 , while showing a high responsivity of 2.3 × 10 5 A/W and a specific detectivity of 4.1 × 10 14 Jones. Our work demonstrates that Janus-interface design makes the upper and lower interfaces complement each other for the joint advancement into high-performance optoelectronic applications, providing a picture to realize the integrated engineering on carrier dynamics by light irradiation, electric field, interfacial trapping, and band alignment.