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We present the results of investigations of the temperature dependences of complex conductivity σ (T ) = σ (T ) − iσ (T ) at frequency 9.4 GHz in series of single crystals V 3+x Si 1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature T c , suppression of superconducting transition temperature T c by nonmagnetic impurities, a positive curvature of σ (T ) curves close to T c , and a coherence peak in σ (T ) at T ∼ T c /2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of T c and the evolution of σ (T ) with Si-content variation are consistently described by changing of the interband scattering rate.

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